Question
Download Solution PDFThe intrinsic carrier (n1) concentration, per cubic centimetre, for Gallium Arsenide (GaAs) is:
Answer (Detailed Solution Below)
Detailed Solution
Download Solution PDFThe correct answer is option 3.
Intrinsic Carrier Concentration
- The intrinsic carrier concentration is the number .of electrons in the conduction band or the number of holes in the valence band that participate in the conduction process.
- This number of carriers depends on the band gap of the material and on the temperature of the material.
- A large band gap will make it more difficult for a carrier to be thermally excited across the band gap, and therefore the intrinsic carrier concentration is lower in higher band gap materials.
- Alternatively, increasing the temperature makes it more likely that an electron will be excited into the conduction band, which will increase the intrinsic carrier concentration.
- Gallium arsenide has a direct bandgap of 1.424 eV at room temperature and the intrinsic carrier concentration of carriers is about 1.7 × 106 cm-3.
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